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Wafer-Bonding and Thinning Technologies

Published online by Cambridge University Press:  29 November 2013

Cynthia A. Desmond-Colinge  and
Ulrich Gösele
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“Wafer bonding” refers to the phenomenon in which mirror-polished, flat, and clean wafers of almost any material—when brought into contact at room temperature—are locally attracted to each other by van der Waals forces and adhere or “bond” to each other. Wafer bonding is alternatively also known as “direct bonding” or “fusion bonding,” or more colloquially as “gluing without glue.” Although this is by no means required, in most cases, the wafers involved in actual applications are typical semiconductor wafers consisting of single-crystalline material used in microelectronics or optoelectronics such as silicon or gallium arsenide.

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Type
Siucon-on-Insulator Technology
Information
MRS Bulletin , Volume 23 , Issue 12 , December 1998 , pp. 30 - 34
Copyright
Copyright © Materials Research Society 1998

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References

1.First Int. Symp. Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochem Soc. Proc., vol. 92–7, edited by Gosele, U., Haisma, J., Schmidt, M.A., and Abe, T. (Electrochemical Society, Pennington, NJ, 1992).Google Scholar
2.Second Int. Symp. Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochem Soc. Proc., vol. 93–29, edited by Baumgart, H., Hunt, C.E., Schmidt, M., and Abe, T. (Electrochemical Society, Pennington, NJ, 1993).Google Scholar
3.Third Int. Symp. Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochem Soc. Proc., vol. 95–7, edited by Baumgart, H., Hunt, C.E., Iyer, S., Gosele, U., and Abe, T. (Electrochemical Society, Pennington, NJ, 1995).Google Scholar
4.Fourth Int. Symp. Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochem Soc. Proc., vol. 98–36, edited by Gösele, U., Baumgart, H., Hunt, C.E., and Abe, T. (Electrochemical Society, Pennington, NJ, 1998).Google Scholar
5.Tong, Q-Y., Kim, L.J., Lee, T.H., and Gösele, U., Electrochem. Solid-Stale Lett. 1 (1998) p. 52.CrossRefGoogle Scholar
6.d'Aragona, F.S. and Ristic, L., in Sensor Technology and Devices, edited by Ristic, L. (Artech House, Boston, 1994) p. 157.Google Scholar
7.Haisma, J., Spierings, B., Biermann, U., and Van Gorkum, A., Appl. Opt. 33 (1994) p. 1154.CrossRefGoogle Scholar
8.Maszara, W.P.J. Electrochem. Soc. 138 (1991) p. 341.CrossRefGoogle Scholar
9.Philips J. Res. 49 (1995) p. 1.CrossRefGoogle Scholar
10.Tong, Q-Y. and Gösele, U., Semiconductor Wafer Bonding: Science and Technology (John Wiley & Sons, New York, 1998).Google Scholar
11.Lasky, J.B., Stiffler, S.R., White, F.R., and Abernathery, F.R., IEDM Tech. Dig. (1985) p. 684.Google Scholar
12.Stengl, R., Ahn, U-Y., and Gösele, U., Jpn. J. Appl. Lett. 27 (1998) p. L2364.CrossRefGoogle Scholar
13.Stengl, R., Tan, T., and Gösele, U., Jpn. J. Appl. Phys. 28 (10) (1989) p. 1735.CrossRefGoogle Scholar
14.Maszara, W.P., Goetz, G., Cavigilia, A., and McKitterick, J.B., J. Appl. Phys. 64 (10) (1988) p. 4943.CrossRefGoogle Scholar
15.Bower, R.W., Ismail, M.S., Roberds, B.E., and Farrens, S.N., Conf. Solid-State Sensor and Actuators (Transducers, Yokohama, Japan, 1993).Google Scholar
16.Bower, R.W., Ismail, M.S., and Roberds, B.E., Appl. Phys. Lett. 28 (1993) p. 2485.Google Scholar
17.Li, Y.A. and Bower, R.W., Jpn. J. Appl. Phys. 37 (3) (1998).Google Scholar
18.Bassous, E. and Lamberti, A.C., Microelectron. Eng. 9 (1989) p. 167.CrossRefGoogle Scholar
19.Reisman, A., Berkenblit, M., Chan, S.A., Kaufman, F.B., and Green, D.C., J. Electrochem. Soc. 126 (8) (1979) p. 1406.CrossRefGoogle Scholar
20.Raley, N.F., Sugiyama, Y., and Van Duzer, T., J. Electrochem. Soc. 131 (1984) p. 161.CrossRefGoogle Scholar
21.Hunt, C.E. and Desmond, C.A., in First Int. Symp. Semiconductor Wafer Bonding: Science, Technology and Applications, vol. 92–7, edited by Gösele, U., Abe, T., Haisman, J., and Schmidt, M.A. (Electrochemical Society, Pennington, NJ, 1992) p. 165.Google Scholar
22.Desmond, C.A., Hunt, C.E., and Collins, S.D., in Proc. 6th Int. Symp. Silicon-on-Insulator Technology and Devices, vol. 94–11, edited by Cristoloveanu, S. (Electrochemical Society, Pennington, NJ, 1994) p. 111.Google Scholar
23.Lehmann, V., Mitani, K., Feijoo, D., and Gösele, U., J. Electrochem. Soc. 138 (1991) p. L3.CrossRefGoogle Scholar
24.Tong, Q-Y., You, H.M., Cha, G., and Gösele, U., Appl. Phys. Lett. 62 (1993) p. 970.CrossRefGoogle Scholar
25.Yamada, A., Okabayashi, O., Nakamura, T., Kanda, E., and Kawashima, M., presented at the 5th International Workshop on Future Electron Devices, Miyagi-Zao, Japan, 1988, p. 201.Google Scholar
26. For example, see Solid-State Technol. (1994) p. 155 or back cover page of Euro. Semicond. (1994).Google Scholar
27.Ledger, A.M. and Clapis, P.J., in Proc. IEEE Int. SOI Conf. (Institute of Electrical and Electronics Engineers, 1993) p. 64.Google Scholar
28.Mumola, P.B. and Gardopee, G.J., presented at the International Conference on Solid-State Devices and Materials, Yokohama, Japan, 1994, p. 256.Google Scholar
29.Mumola, P.B., Gardopee, G.J., Feng, T., Ledger, A.M., Clapis, P.J., and Miller, E.P., in Proc. Second Int. Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications, vol. 93–29, edited by Schmidt, M.A., Hunt, C.E., Abe, T., and Baumgart, H. (Electrochemical Society, Pennington, NJ, 1993) p. 410.Google Scholar
30.Yonehara, T., Sakaguchi, K., and Sato, N., Appl. Phys. Lett. 64 (1994) p. 2108.CrossRefGoogle Scholar
31.Unagami, T. and Seki, M., J. Electrochem. Soc. 125 (1978) p. 1339.CrossRefGoogle Scholar
32.Mitchell, S., First Int. Symp. Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochem Soc. Proc., vol. 92–7, edited by Gösele, U., Haisma, J., Schmidt, M.A., and Abe, T. (Electrochemical Society, Pennington, NJ, 1991) p. 433.Google Scholar
33.Terao, A. and Van de Wiele, F., IEEE Circuits Devices 3–4 (1987) p. 31.CrossRefGoogle Scholar
34.Ismail, M.S. and Bower, R.W., Symp. Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochem Soc. Proc., vol. 92–7, edited by Gösele, U., Haisma, J., Schmidt, M.A., and Abe, T. (Electrochemical Society, Pennington, NJ, 1991) p. 474.Google Scholar
35.Houston, T.W., IEEE Circuits Devices 3–4 (1987) p. 8.CrossRefGoogle Scholar
36.Hunt, C.E., Desmond, C.A., Ciarlo, D.R., and Bennett, W.J., J. Micromech. Microeng. 1 (1991) p. 152.CrossRefGoogle Scholar
37.Eda, K., Kanaboshi, A., Ogura, T., and Taguchi, Y., J. Appl. Phys. 74 (1993) p. 4801.CrossRefGoogle Scholar
38.Abe, T., Sunagawa, K., Uchiyama, A., Yoshizawa, K., and Nakazato, Y., Jpn. J. Appl. Phys. 32 (1993) p. 334.CrossRefGoogle Scholar
39.Lee, T-H., Tong, Q-Y., Chao, Y-L., Huang, L-J. and Gösele, U., 8th Int. Symp. Silicon-on-Insulator Technology and Devices, Electrochem. Soc. Proc., vol. 97–23, edited by Cristoloveanu, S. (Electrochemical Society, Pennington, NJ, 1997) p. 27.Google Scholar
40.Lehmann, V., Mitani, K., Stengl, R., Mii, T., and Gösele, U., Jpn. J. Appl. Phys. 28-L2 (1989) p. 141.CrossRefGoogle Scholar
41.Liau, Z.L. and Mull, D.E., Appl. Phys. Lett. 56 (1990) p. 737.CrossRefGoogle Scholar
42.Lo, Y.H., Bhat, R., Hwang, D.M., Chua, C., and Lin, C.H., Appl. Phys. Lett. 62 (1993) p. 1038.CrossRefGoogle Scholar
43.Mori, K., Tokutome, K., and Sugou, S., in Proc. IEEE LEOS ′96 Conf. (Institute of Electrical and Electronics Engineers, 1996) p. 296.Google Scholar
44.Hiso, Y., Amano, C., Itoh, Y., Tateno, K., Tadokoro, T., Takenouchi, H., and Kurokawa, T., IEEE Photon. Technol. Lett. 9 (1997) p. 8.Google Scholar
45.Gordon, L., Woods, G.L., Eckhardt, R.C., Route, R.R., Feigelson, R.S., Fejer, M.M., and Byer, R.L., Electron. Lett. 29 (1993) p. 1942.CrossRefGoogle Scholar
46.Lo, Y.H., Bhat, R., Hwang, D.M., Koza, M.A., and Lee, T.P., Appl. Phys. Lett. 58 (1991) p. 1961.CrossRefGoogle Scholar
47.Ram, R.J., Dudley, J.J., Bowers, J.E., Yang, L., Carey, K., Rosner, S.J., and Nauka, K., J. Appl. Phys. 78 (1995) p. 4227.CrossRefGoogle Scholar
48.Margalit, N.M., Babic, D.I., Streubel, K., Mirin, R.P., Mars, D.E., Bowers, J.E., and Hu, E.L., Appl. Phys. Lett. 69 (1996) p. 471.CrossRefGoogle Scholar
49.Babic, D.I., Dudley, J.J., Streubel, K., Mirin, R.P., Bowers, J.E., and Hu, E.L., Appl. Phys. Lett. 66 (1995) p. 1030.CrossRefGoogle Scholar
50.Kish, F.A., in Proc. IEEE LEOS ′96 Conf. (Institute of Electrical and Electronics Engineers, 1996) p. 292.Google Scholar