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Ab Initio Calculation of Tight-Binding Parameters

Published online by Cambridge University Press:  10 February 2011

A. K. Mcmahan
Affiliation:
Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, CA 94551
J. E. Klepeis
Affiliation:
Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, CA 94551
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Abstract

We calculate ab initio values of tight-binding parameters for the /-electron metal Ce and various phases of Si, from local-density functional one-electron Hamiltonian and overlap matrix elements. Our approach allows us to unambiguously test the validity of the common minimal basis and two-center approximations as well as to determine the degree of transferability of both nonorthogonal and orthogonal hopping parameters in the cases considered.

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