Hostname: page-component-7b7567c8c-wxvwp Total loading time: 0 Render date: 2026-11-15T22:13:54.484Z Has data issue: false hasContentIssue false
  • English
  • Français

AB Initio Calculations for Defects in Silicon-Based Amorphous Semiconductors

Published online by Cambridge University Press:  21 February 2011

Nobuhiko Ishii and
Tatsuo Shimizu
Nobuhiko Ishii
Affiliation:
Dept. of Electrical Engineering, Fukui Institute of Technology, Fukui 910, Japan
Tatsuo Shimizu
Affiliation:
Dept. of Electronics, Kanazawa University, Kanazawa 920, Japan
Get access

Abstract

We have calclulated the ESR hyperfine parameters of threefold-coordinated Si atoms and twofold-coordinated P and N atoms in Si-based amorphous semiconductors using the density functional theory with a local-spin-density approximation. These calculated results have been compared with the observed ESR results.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992, 305
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Stutzmann, M. and Biegelsen, D.K., Phys. Rev. B40, 9834 (1989).Google Scholar
2. Biegelsen, D.K. and Stutzmann, M., Phys. Rev. B33, 3006 (1986).Google Scholar
3. Yokomichi, H., Hirabayashi, I. and Morigaki, K., Solid State Commun. 61, 697 (1987).Google Scholar
4. Ishii, N. and Shimizu, T., Phys. Rev. B42, 9697 (1990).Google Scholar
5. Pantelides, S.T., Phys. Rev. Lett. 57, 2979 (1986).Google Scholar
6. Stutzmann, M. and Street, R.A., Phys. Rev. Lett. 54, 1836 (1985).Google Scholar
7. Hirabayashi, I., Morigaki, K., Yamasaki, S. and Tanaka, K., in Optical Effects in Amorphous Semiconductors, edited by Taylor, P.C. and Bishop, S.G. (AIP Conf. Proc. No. 120, AIP, New York, 1984), p. 8.Google Scholar
8. Shimizu, T., Xu, X., Ohta, T., Kumeda, M., and Ishii, N., Solid State Commun. 67, 941 (1988).Google Scholar
9. Schutte, S., Finger, F. and Fuhs, W., J. Non-cryst. Solids 114, 411 (1989).Google Scholar
10. Ishii, N., Kumeda, M. and Shimizu, T., Solid State Commun. 53, 543 (1985).Google Scholar
11. Yokoyama, S., Hirose, M. and Osaka, Y., Jpn. J. Appl. Phys. 20, L35 (1980).Google Scholar
12. Shimizu, T., Oozora, S., Morimoto, A., Kumeda, M. and Ishii, N., Solar Energy Mater. 8, 311 (1982).Google Scholar
13. Lenahan, P.M. and Curry, S.E., Appl. Phys. Lett. 56, 157 (1990);Google Scholar
Warren, W.L. and Lenahan, P.M., Phys. Rev. B42, 1773 (1990).Google Scholar
14. Warren, W.L., Lenahan, P.M. and Curry, S.E., Phys. Rev. Lett. 65, 207 (1990).Google Scholar
15. Warren, W.L., Rong, F.C., Poindexter, E.H., Gerardi, G.J. and Kanicki, J., J. Appl. Phys. 70, 346 (1991).Google Scholar
16. Ishii, N. and Shimizu, T., Phys. Rev. B44, 12776 (1991).Google Scholar
17. Kohn, W. and Sham, L.J., Phys. Rev. 140, A1133 (1965).Google Scholar
18. Gunnarsson, O. and Lundqvist, B.I., Phys. Rev. B13, 4274 (1976); B15, 6006 (1977).Google Scholar
19. Cook, M. and White, C.T., Phys. Rev. Lett. 59, 1741 (1987); Phys. Rev. B38, 9674 (1988).Google Scholar
20. Becke, A.D., J. Chem. Phys. 88, 2547 (1988);Google Scholar
Becke, A.D. and Dickson, R.M., J. Chem. Phys., 89, 2993 (1988).Google Scholar
21. Ishii, N., Kumeda, M. and Shimizu, T., Jpn. J. Appl. Phys. 24, L244 (1985).Google Scholar
22. Redfield, D. and Bube, R.H., Phys. Rev. Lett. 65, 464 (1990).Google Scholar
23. Shimizu, T., Ishii, N. and Kumeda, M., in Tetrahedrally - Bonded Amorphous Semiconductors, edited by Adler, D. and Fritzsche, H. (Plenum, New York, 1985), p. 187.Google Scholar