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1.3 μm InAs/GaAs Quantum Dot Led

Published online by Cambridge University Press:  10 February 2011

D. Childs,
S. Malik,
P. Siverns,
C. Roberts and
R. Murray
D. Childs
Affiliation:
Centre for Electronic Materials and Devices, The Blackett Laboratory, Imperial College, London, UK
S. Malik
Affiliation:
Centre for Electronic Materials and Devices, The Blackett Laboratory, Imperial College, London, UK
P. Siverns
Affiliation:
Centre for Electronic Materials and Devices, The Blackett Laboratory, Imperial College, London, UK
C. Roberts
Affiliation:
Centre for Electronic Materials and Devices, The Blackett Laboratory, Imperial College, London, UK
R. Murray
Affiliation:
Centre for Electronic Materials and Devices, The Blackett Laboratory, Imperial College, London, UK
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Abstract

We have determined the growth conditions which result in a narrow linewidth and room temperature emission at 1.3pm from InAs/GaAs Quantum dots (QDs). The QDs formed under these conditions are extremely uniform in size and exhibit an emission linewidth of only 25meV. Single QD layers have been incorporated into p-i-n diodes which exhibit strong electroluminescence. We have compared the efficiency of these devices with a nominally identical quantum well device. The QD based device exhibits a higher electroluminescence efficiency, especially at low current densities. At higher current densities there is a loss of efficiency due to recombination from excited states.

Operated under reverse bias, the diodes act as photo-detectors and the measured photocurrent spectrum exhibits peaks due to absorption in the ground and excited states of the QDs as well as the 2D confining layer.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999, 267
Copyright
Copyright © Materials Research Society 2000

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