Hostname: page-component-7b7567c8c-fvjsw Total loading time: 0 Render date: 2026-11-12T07:44:40.962Z Has data issue: false hasContentIssue false
  • English
  • Français

1-3 MeV B+ and P+ Implants for C-Mos Technology

Published online by Cambridge University Press:  25 February 2011

J. De Pontcharra,
P. Spinelli and
M. Bruel
J. De Pontcharra
Affiliation:
LETI-IRDI - Commissariat à l'Energie Atomique - LETI-CEN/G - 85 × - 38041 GRENOBLE Cedex -, FRANCE
P. Spinelli
Affiliation:
LETI-IRDI - Commissariat à l'Energie Atomique - LETI-CEN/G - 85 × - 38041 GRENOBLE Cedex -, FRANCE
M. Bruel
Affiliation:
LETI-IRDI - Commissariat à l'Energie Atomique - LETI-CEN/G - 85 × - 38041 GRENOBLE Cedex -, FRANCE
Get access

Abstract

The need for low temperature processes in VLSI CMOS technology has led to increasing interest in fully implanted wells. In comparison with diffused wells the advantages are good control of the doping profile, low lateral distribution and self-immunity to latch-up.

The technique using a medium energy machine with multiple charged ions is not viable in a production context and only high energy machines can be improved to meet the high throughputs required.

We have performed boron and phosphorus in the 1 to 3 MeV range on tandem and Van de Graaff machines to prove their effectiveness. Spreading resistance for boron and phosphorus and SIMS for boron are the characterizatton methods uped. The agreement with expected profiles for doses in the 1013 to 1014 /cm2 range is good. We checked the compatibility with a N-well CMOS process: - low doping level at the surface to ensure low capitances and no disturbance of the channel region - high doping level at one micrometer under the surface to lower punchthrough and latch-up effects. The efficiency of masking materials such as Si02 and photoresists is experimentally measured detecting residual doping underneath various thicknesses of the masking pattern. The application to C-MOS technology is discussed.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 PRAMANIK, D., CURRENT, M.I., (Solid State Technology, May 1984)Google Scholar
2 ZIEGLER, J.F., Proceedings of the 5th Ion Implantation Equip. Tech. '84, Nucl. Instr. and Meth. (B6) 1985, 270 Google Scholar
3 RATHMEL, R.D., SUNDQUIST, M.L., ibid., 56 Google Scholar
4 CLEFF, B., SCHULTE, W.-H., SCHULZE, H. and TERLAU, W. KOUDIJS, R., DUBBELMAN, P. and PETERS, H.J., ibid., 46 Google Scholar
5 SPINELLI, P., ESCARON, J., SOUBIE, A. and BRUEL, M., ibid. 283 Google Scholar
6 DICKEY, D.H. in: Proc. Semiconductor Technology: Spreading - resistance Symp., Gaitherburg, Maryland (June 1974) NBS special publ. 400-10 (Dec., 1974)Google Scholar
7 MAZUR, R.G., GRUBER, G.A., Solid State Technology, Nov., 1981 Google Scholar
8 CURRENT, M.I., TURNER, N.L., SMITH, T.C., CRANE, D. in proceedings of the 5th Ion Implantation Equip. Tech. '84, Nucl. Instr. and Meth. (B6) 1985, 336.Google Scholar
9 WINTERBON, K.B. “Ion Implantation Range and Energy Deposition Distribution, Vol. 2, Low Energies”, Plenum Press, New York (1975)Google Scholar
10 LINDHARD, J., SCHARFF, M., SCHIOTT, H.E., Mat. Fys. Medd. Dan. Vid. Selsk 33, (14) 1963 Google Scholar
11 INGRAM, D.C., WALSH, D.A. to be published in the Proc. of IBMM'84, Cornell University (July 1984), Ithaca, N.Y. Google Scholar
12 MABY, E.W., Ph.D. dissertation, Mass. Institute of Technology 1979.Google Scholar
13 ZIEGLER, J.F., CROWDER, B.L., KLEINFELDER, W.J., IBM J. Res. Develop., Nov. 1971.Google Scholar
14 TERRIL, K.W., BYRNE, P.F., ZAPPE, H.P., CHEUNG, N.W. and IEDM, C. H. 1984.Google Scholar