Hostname: page-component-7b7567c8c-lpg2g Total loading time: 0 Render date: 2026-11-15T13:00:24.253Z Has data issue: false hasContentIssue false
  • English
  • Français

1.8 kV, 10 mOhm-cm2 4H-SiC JFETs

Published online by Cambridge University Press:  01 February 2011

James D. Scofield,
Sei-Hyung Ryu,
Sumi Krishnaswami,
Husna Fatima and
Anant Agarwal
James D. Scofield
Affiliation:
james.scofield@wpafb.af.mil, Air Force Research Laboratory, AFRL/PRPE, 1950 Fifth St, WPAFB, OH, 45433, United States, 937-255-5949
Sei-Hyung Ryu
Affiliation:
SeiHyung_Ryu@cree.com, CREE, Inc, Advanced Devices, 4600 Silicon Dr, Durham, NC, 27703, United States
Sumi Krishnaswami
Affiliation:
Sumi_Krishnaswami@cree.com, CREE, Inc, Advanced Devices, 4600 Silicon Dr, Durham, NC, 27703, United States
Husna Fatima
Affiliation:
Husna_fatima@cree.com, CREE, Inc, Advanced Devices, 4600 Silicon Dr, Durham, NC, 27703, United States
Anant Agarwal
Affiliation:
anant_agarwal@cree.com, CREE, Inc, Advanced Devices, 4600 Silicon Dr, Durham, NC, 27703, United States
Get access

Abstract

Fabrication and characteristics of high voltage, normally-on JFETs in 4H-SiC are presented. The devices were built on 5x1015 cm-3 doped, 12 μm thick n-type epilayer grown on a n+ 4H-SiC substrate. A specific on-resistance of 10 m Ω-cm2 and a blocking voltage of 1.8 kV were measured. Device characteristics were measured for temperatures up to 300oC. An increase of specific on-resistance by a factor of 5 and a decrease in transconductance were observed at 300oC, when compared to the value at room temperature. This is due to a decrease in bulk electron mobility at elevated temperature. A slight negative shift in pinch-off voltage was also observed at 300oC. The devices demonstrated robust DC characteristics for temperatures up to 300oC, and stable high temperature inverter operation in a power DC-DC converter application, using these devices, is reported in this paper.

Keywords

devicessemiconductingelectrical properties

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Ryu, S., Agarwal, A., Richmond, J., Palmour, J., Saks, N., and Williams, J., “10 A, 2.4 kV Power DiMOSFETs in 4H-SiC,” IEEE Electron Device Letters, Vol. 23, No. 6, June 2002. pp. 321–323.Google Scholar
[2] Krishnaswami, S., Agarwal, A., Capell, C., Richmond, J., Ryu, S., Palmour, J., Balachandran, S., Chow, T. P., Bayne, S., Geil, B., Jones, K. A., and Scozzie, C., “1000 V, 30 A SiC bipolar Junction Transistors and Integrated Darlington Pairs,” Materials Science Forum Vols. 483–485, pp. 879–900.Google Scholar
[3] Friedrichs, P., Elpelt, R., Schorner, R., Mitlehner, H., and Stephani, D., “Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch,” Materials Science Forum Vols. 457–460, pp. 1201–1204.Google Scholar
[4] Schaffer, W. J., Negley, G. H., Irvine, K. G., and Palmour, J. W., “Conductivity Anistropy In Epitaxial 6H and 4H SiC,” Mat. Res. Soc. Symp. Proc. Vol. 339 (1994), pp. 595–600.Google Scholar