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Altering Resistivity in Diamond Films Without Impurity Addition

Published online by Cambridge University Press:  10 February 2011

Colin C. Baker and
Karen M. McNamara
Colin C. Baker
Affiliation:
Department of Chemical Engineering, Worcester Polytechnic Institute, Worcester, MA, USA 01609 mcnamara@wpi.edu
Karen M. McNamara
Affiliation:
Department of Chemical Engineering, Worcester Polytechnic Institute, Worcester, MA, USA 01609 mcnamara@wpi.edu
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Abstract

CVD Diamond films with resistivites comparable to that measured in natural type IIA diamond can be fabricated using a microwave-plasma assisted growth environment. Modification of the resistivity of these films is typically accomplished through the introduction of impurities, or dopants such as boron. Some applications, however, require that the purity of the carbon lattice be maintained, while still altering the resistivity of the film. This is the case for many applications of diamond in space. Here, varying the resistivity of CVD diamond is investigated by controlling the introduction of sp2coordinated bonds, yet maintaining the overall diamond structure and carbon purity. Experimental results will be presented, and the use of these materials in NASA's Genesis Discovery Mission will be discussed

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 593: Symposium U – Amorphous & Nanostructured Carbon , 1999, 477
Copyright
Copyright © Materials Research Society 2000

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References

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