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Amorphous Silicon Solar Cells Techniques for Reactive Conditions

Published online by Cambridge University Press:  15 February 2011

Satoshi Shimizu,
Kojiro Okawa,
Toshio Kamiya,
C.M. Fortmann and
Isamu Shimizu
Satoshi Shimizu
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, JAPAN
Kojiro Okawa
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, JAPAN
Toshio Kamiya
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, JAPAN
C.M. Fortmann
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, JAPAN
Isamu Shimizu
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, JAPAN
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Abstract

The preparation of amorphous silicon films and solar cells using SiH2Cl2 source gas and electron cyclotron resonance assisted chemical vapor deposition (ECR-CVD) was investigated. By using buffer layers to protect previously deposited layers improved a-Si:H(Cl) solar cells were prepared and studied. The high quality a-Si:H(Cl) films used in this study exhibited low defect densities (~1015cm-3) and high stability under illumination even when the deposition rate was increased to ~15A/s. The solar cells were deposited in the n-i-p sequence. These solar cells achieved VOC values of ~ 0.89V and ~ 3.9% efficiency on Ga doped ZnO (GZO) coated specular substrate. The a-Si:H(C1) electron and hole μτ products were ~10-8cm2/V.

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