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Amorphous to Crystalline Phase Transformations in High Dose Ion Implanted Silicon

Published online by Cambridge University Press:  25 February 2011

J.S. Williams,
R.P. Thornton,
R.G. Elliman,
Y.H. Li and
A.P. Pogany
J.S. Williams
Affiliation:
Microelectronics and Materials Technology Centre, RMIT, Melbourne, 3001, Australia and Electronic Materials Engineering, RSPhysS, ANU, Canberra, 2601, Australia
R.P. Thornton
Affiliation:
Microelectronics and Materials Technology Centre, RMIT, Melbourne, 3001, Australia
R.G. Elliman
Affiliation:
Microelectronics and Materials Technology Centre, RMIT, Melbourne, 3001, Australia
Y.H. Li
Affiliation:
Microelectronics and Materials Technology Centre, RMIT, Melbourne, 3001, Australia
A.P. Pogany
Affiliation:
Microelectronics and Materials Technology Centre, RMIT, Melbourne, 3001, Australia
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Abstract

Crystallization processes during thermal annealing have been studied for a number of group III, IV and V impurities implanted into amorphous Si. At high impurity concentrations, an amorphous to polycrystalline transformation is observed. For low solubility, low melting point species, this transformation is melt-mediated, whereas it can occur in the solid phase for other species such as Sb.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989, 629
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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