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An Algorithm For Exhaustive Heteroepitaxial Substrate Searches

Published online by Cambridge University Press:  25 February 2011

Paul J. Shlichta
Paul J. Shlichta*
Affiliation:
Crystal Research, 9112 Tucker Road SE, Olympia, WA 98503-8904, USA.
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Abstract

An algorithm has been discovered that greatly simplifies the exhaustive search for all orientations of all known crystals that have a lattice match with crystal film to be epitaxially deposited. It is based on the observations that (1) a two-dimensional lattice match of necessity entails an integer-ratio match between the areas of the unit parallelograms of the substrate and deposit planes and (2) that the unit area A (hkl) is equal to the unit cell volume divided by d(hkl). Using this algorithm, we are currently verifying the area-match tolerances for known cases of epitaxy and developing database-generating and searchprogram software.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991, 489
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] For heteroepitaxial terminology, see: McPherson, A. and Shlichta, P. J., J. Crystal Growth,.5, 206 (1987), cf. pp. 212–13.Google Scholar
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[6] This work is being carried out by Dr. John Simmins of Eutech, Frederick, MD, which, like Crystal Research, is an ACRONIM (Associated Companies and Research Organizations for Novel and Innovative Materials) affiliate.Google Scholar
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