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An Experimental and Simulation Study of Arsenic Diffusion Behavior in Point Defect Engineered Silicon

Published online by Cambridge University Press:  01 February 2011

Ning Kong,
Taras A. Kirichenko,
Gyeong S. Hwang,
Foisy C. Mark,
Steven G. H. Anderson and
Sanjay K. Banerjee
Ning Kong
Affiliation:
kongning@mail.utexas.edu, UT-Austin, Microelectronics Research Center, 10100 Burnet Rd. Bldg 160, Austin, TX, 78758, United States
Taras A. Kirichenko
Affiliation:
Taras.Kirichenko@freescale.com, Freescale Semiconductor Inc., 3501 Ed Bluestein Blvd, MD K10,, Austin, TX, 78721, United States
Gyeong S. Hwang
Affiliation:
gshwang@che.utexas.edu, The University of Texas at Austin, Department of Chemical Engineering, Austin, TX, 78712, United States
Foisy C. Mark
Affiliation:
Mark.Foisy@freescale.com, Freescale Semiconductor Inc., 3501 Ed Bluestein Blvd, MD K10, Austin, TX, 78721, United States
Steven G. H. Anderson
Affiliation:
Steven.g.h.Anderson@freescale.com, Freescale Semiconductor Inc., 3501 Ed Bluestein Blvd, MD K10,, Austin, TX, 78721, United States
Sanjay K. Banerjee
Affiliation:
banerjee@ece.utexas.edu, The University of Texas at Austin, Microelectronics Research Center, Austin, TX, 78758, United States
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Abstract

We report that arsenic diffusion can be enhanced and retarded by surrounding interstitial rich and vacancy rich environments created by Si point defect engineering implant. The enhancement and retardation can be attributed to the dominant arsenic interstitial diffusion mechanism during post-implant anneal. Kinetic Monte Carlo simulations with newly implemented models show good match with experiments. Our study suggests the importance of arsenic interstitial mechanism and a possible approach for n-type ultra shallow junction fabrication.

Keywords

Asdiffusiondefects

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