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Applications of a Continuous Wave Incoherent Light Source (Cwils) to Semiconductor Processing

Published online by Cambridge University Press:  15 February 2011

H.B. Harrison,
S.T. Johnson,
B. Cornish,
F.M. Adams,
K.T. Short and
J.S. Williams
H.B. Harrison
Affiliation:
J.M.R.C. Faculty of Engineering, Royal Melbourne Institute of Technology, Melbourne, 3000, Australia
S.T. Johnson
Affiliation:
J.M.R.C. Faculty of Engineering, Royal Melbourne Institute of Technology, Melbourne, 3000, Australia
B. Cornish
Affiliation:
J.M.R.C. Faculty of Engineering, Royal Melbourne Institute of Technology, Melbourne, 3000, Australia
F.M. Adams
Affiliation:
J.M.R.C. Faculty of Engineering, Royal Melbourne Institute of Technology, Melbourne, 3000, Australia
K.T. Short
Affiliation:
J.M.R.C. Faculty of Engineering, Royal Melbourne Institute of Technology, Melbourne, 3000, Australia
J.S. Williams
Affiliation:
J.M.R.C. Faculty of Engineering, Royal Melbourne Institute of Technology, Melbourne, 3000, Australia
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Abstract

We present results which highlight applications of a continuous wave incoherent light source in the processing of semiconductor devices. In particular, damage removal and activation of ion implanted gallium arsenide is demonstrated for both capless and capped annealing of low dose implants at temperatures of > 800°C for times < 10 s. For gallium arsenide FET applications, we demonstrate that it is possible to simultaneously carry out activation, contacting and interconnection steps by utilizing thermomigration processes which are not available with conventional furnace processing. In silicon we demonstrate that shallow multi layer bipolar structures can be successfully fabricated with anneal cycles that lead to supersaturation effects and negligible diffusion.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982, 393
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

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