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Applications Of Tin Thin Films in Silicon Device Technology

Published online by Cambridge University Press:  15 February 2011

M. Wittmer and
H. Melchior
M. Wittmer
Affiliation:
Swiss Federal Institute of Technology, 8049 Zurich (Switzerland)
H. Melchior
Affiliation:
Swiss Federal Institute of Technology, 8049 Zurich (Switzerland)
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Abstract

TiN thin films have interesting applications in silicon device technology. We show that TiN is a very efficient barrier for silicon diffusion in metallizations to silicon and discuss implications for high-temperature-resistant and reliable contacts to silicon power devices. The barrier height of TiN on n-type silicon was found to be 0.49 V, allowing the fabrication of low barrier Schottky diodes on high resistivity material and good ohmic contacts to low resistivity n- and p-type material. Finally, we present results on the oxidation kinetics of TiN and the preparation of metaloxide- semiconductor capacitors and field effect transistors with TiN as the gate material.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 10: Symposium C – Thin Films and Interfaces I , 1981, 409
Copyright
Copyright © Materials Research Society 1982

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References

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