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a-Si:H Photo Diode With Variable Spectral Sensitivity

Published online by Cambridge University Press:  10 February 2011

Peter Rieve,
Jürgen Giehl,
Qi Zhu and
Markus Böhm
Peter Rieve
Affiliation:
Universität-GH Siegen, Institut für Halbleiterelektronik (IHE), D-57068 Siegen, Germany
Jürgen Giehl
Affiliation:
Universität-GH Siegen, Institut für Halbleiterelektronik (IHE), D-57068 Siegen, Germany
Qi Zhu
Affiliation:
Universität-GH Siegen, Institut für Halbleiterelektronik (IHE), D-57068 Siegen, Germany
Markus Böhm
Affiliation:
Universität-GH Siegen, Institut für Halbleiterelektronik (IHE), D-57068 Siegen, Germany
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Abstract

A novel two terminal thin film photo diode for color detection has been developed. The device structure which is based on standard amorphous silicon nipin multilayers exhibits three or even more linearly independent spectral sensitivity peaks and provides linearity over a wide range of illumination levels. Band gap engineering and electric field tailoring allow a precise voltage controlled shift of the collection region of photo generated carriers. The steady-state as well as the transient device characteristics have been studied in detail. Emphasis was put on optimization of the spectral sensitivity of the color diodes. Furthermore, an electronic color correction algorithm is presented which results in an improved color separation.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996, 135
Copyright
Copyright © Materials Research Society 1996

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