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Atomic Layer Epitaxy

Published online by Cambridge University Press:  28 February 2011

Akira Usui
Akira Usui*
Affiliation:
Fundanvttntal Research Laboratories, NEC Corporation 34 Miyukigaoka, Tsukuba, Ibaraki 305, JAPAN
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Abstract

Atomic layer epitaxy(ALE) of III-V compound semiconductors is reviewed. This technology has grown in recent years because of potential applications to nanometer-order structures as well as to monolayer/cycle growth with high-uniformity in growth thickness, and to excellent selective-area growth. Recent developments in chloride ALE of various compounds and heterostructures are described. Potentials of ALE for producing such fine structures are shown.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990, 183
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1] Suntola, T. and Anton, M.J., US Patent No.4-058-430(1977).Google Scholar
[2] Nishizawa, J., Abe, H., and Kurabayashi, T., J.Electrochem.Soc. 132, 1197(1985).Google Scholar
[3] Usui, A. and Sunakawa, H., Jpn.J.Appl.Phys. 25, L212(1986).Google Scholar
[4] Mori, K., Toshida, M., Usui, A., and Terao, H., Appl.Phys.Lett. 52, 27(1988).Google Scholar
[5] Usui, A., and Watanabe, H., J. de Phys. 48, C5–21(1987).Google Scholar
[6] Watanabe, H., and Usui, A., GaAs and Related Compounds 1986, Inst.Phys.Con.Ser., No.83, 1987, p.1.Google Scholar
[7] Aoyagi, Y., Doi, A., Iwai, S., and Namba, S., J. Vac Sci. Technol. B5, 1460(1987).Google Scholar
[8] Ozeki, M., Mochizuki, K., Ohtsuka, N., and Kodama, K., Appl.Phys.Lett. 53, 1509(1988).Google Scholar
[9] Denbaars, S.P., Dapkus, P.D., Beyler, C.A., Hariz, A., and Dzurko, K.M., J.Cryst.Growth 93, 195(1988).Google Scholar
[10] Bhat, R., Hayes, J.R., Colas, E., and Esagui, R., IEEE Electron Device Lett. 9, 442(1988).Google Scholar
[11] Hashemi, M., Ramdani, J., McDermott, B.T., Reid, K., and Bedair, S.M., Appl.Phys.Lett. 56, 964(1990). [12] Petroff, P.M., Gossard, A.C. and Wiegmann, W., Appl.Phys.Lett. 45, 620(1984). [13] Fukui, T. and Saito, H., Appl.Phys.Lett. 5.0, 824(1987). [14] Kodama, K., Ozeki, M., Mochizuki, K., and Ohtsuka, N., Appl.Phys.Lett. 5, 656(1989). [15] Ohno, H., Ohtsuka, S., Ishii, H., Matsubara, Y.,and Hasegawa, H., Appl.Phys.Lett. 54 2000(1989). [16] Nishizawa, J., Kurabayashi, T., Abe, H., and Nozoe, A., Surf.Sci. 185, 249(1987). [17] Colas, E., Aspns, D.E., Bhat, R., Studna, A.A., Koza, M.A., and Keramidas, V.G., J.Cryst.Growth 9_4, 613(1989). [18] Liu, T.H., Appl.Phys.Lett. 55, 1244(1989). [19] McCaulley, J.A., McCrary, V.R., and Donnelly, V.M., J.Phys.Chem. 93, 1184(1989). [20] Theeten, J.B. and Hottier, F., Surf.Sci., 58, 593(1976). [21] Cadoret, R., Current Topics in Materials Science, vol.5, edited by E.Kalidas(Nrth-Holland, Amterdam,1980). [22] Shaw, D.W., J.Phys.Chem.Solids, 36, 111(1975). [23] Shaw, D.W., J.Electrochem.Soc. 117, 683(1970).Google Scholar
[24] Korec, J. and Heyen, M., J.Cryst.Growth, 60, 297(1982).Google Scholar
[25] Mizuno, O. and Watanabe, H., J.Cryst.Growth, 30 248(1975).Google Scholar
[26] Sasaoka, C., Yoshida, M., and Usui, A., Jpn.J.Appl.Phys. 27, L490(1988).Google Scholar
[27] Usui, A., and Sunakawa, H., GaAs and Related Compounds 1986, Inst.Phys.Con.Ser. No.83, 1987, p. 129.Google Scholar
[28] Usui, A., Oyo Buturi, 59, 41(1990).Google Scholar
[29] Jurgensen, H., Korec, J., Heyen, M., and Balk, P., J.Cryst.Growth, 6, 73(1984).Google Scholar
[30] Yao, T., Jpn.J.Apply.Phys. 22, L680(1983).Google Scholar
[31] McDermott, B.T., EI-Masry, N.A., Tischler, M.A. and Bedair, S.M., Appl.Phys.Lett. 51, 1830(1987).Google Scholar
[32] Ohno, H., Ohtsuka, S., Ohuchi, A., Matsubara, T. and Hasegawa, H., J.Cryst.Growth 93, 342(1988).Google Scholar
[33] Shimawaki, H., Kato, Y. and Usui, A., presented on MRS meeting, Syposium D, Boston, MA, Dec 1989.Google Scholar
[34] Usui, A. and Sunakawa, H., Extended Abstracts of the 20th Conference on Solid State Devices and Materials, Tokyo, 1988, p. 379.Google Scholar
[35] Shaw, D.W., J. Electrochem. Soc. 115, 405(1968).Google Scholar
[36] Usui, A., Sunakawa, H., Stutzler, F.J., and Ishida, K., Appl.Phys. Lett. 56, 289(1990).Google Scholar
[37] Turco, F.S., Tamargo, M.C., Hwang, D.W., Nahory, R.E., Werner, J., Kash, K. and Kapon, E., Appl.Phys.Lett. 56, 72(1990).Google Scholar