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Band alignment at amorphous/crystalline silicon hetero-interfaces

Published online by Cambridge University Press:  27 June 2011

L. Korte,
T. F. Schulze,
C. Leendertz,
M. Schmidt and
B. Rech
L. Korte
Affiliation:
Helmholtz-Zentrum Berlin für Materialien und Energie, Institut Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
T. F. Schulze
Affiliation:
Helmholtz-Zentrum Berlin für Materialien und Energie, Institut Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
C. Leendertz
Affiliation:
Helmholtz-Zentrum Berlin für Materialien und Energie, Institut Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
M. Schmidt
Affiliation:
Helmholtz-Zentrum Berlin für Materialien und Energie, Institut Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
B. Rech
Affiliation:
Helmholtz-Zentrum Berlin für Materialien und Energie, Institut Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
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Abstract

We present an investigation of the band offsets in amorphous/crystalline silicon heterojunctions (a-Si:H/c-Si) using low energy photoelectron spectroscopy, ellipsometry and surface photovoltage data. For a variation of deposition conditions that lead to changes in hydrogen content and the thereby the a-Si:H band gap by ∼180 meV, we find that mainly the conduction band offset ΔE V varies, while ΔE C stays constant within experimental error. This result can be understood in the framework of charge neutrality (CNL) band lineup theory.

Keywords

amorphousSielectronic structure

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References

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