Hostname: page-component-7b7567c8c-7pwfn Total loading time: 0 Render date: 2026-11-15T20:27:55.157Z Has data issue: false hasContentIssue false
  • English
  • Français

Band-Offsets Between Group-III-Nitrides

Published online by Cambridge University Press:  21 February 2011

E. A. Albanesi,
W. R. L. Lambrecht and
B. Segall
E. A. Albanesi
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, OH-44106–7079
W. R. L. Lambrecht
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, OH-44106–7079
B. Segall
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, OH-44106–7079
Get access

Abstract

The valence-band offset at the zincblende AIN/GaN. AIN/InN and InN/GaN (110) interfaces are calculated self-consistently by means of the linear muffin-tin orbital method using up to 5+5 layer supercells. All interfaces have a type I-offset. Assuming interface orientation and polytype effects on the valence-band maximum to be reasonably small, a type I offset can also be expected for wurtzite interfaces. Our results are in very good agreement with experimental values for AIN/GaN, the only nitride interface for which they are available.

Subject index terms: band offsets, interfaces, hetero junctions, superlattices. III-nitrides.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Wide-baud-gap Semiconductors, ed. Van de Walle, C. G., Proc. Seventh Trieste ICTP-IUPAP Semiconductor Symposium (1992), (North-Holland, Amsterdam 1993), also published as Physica B 185, (1993).Google Scholar
2. Wide Band Gap Semiconductors, Ed. Moustakas, T. D., Pankove, J. H., and Hamakawa, Y., Mater. Res. Symp. Proc. Vol. 242, (MRS, Pittsburgh, 1992).Google Scholar
3. Yeh, C.-Y., Lu, Z. W., Froyen, S. and Zunger, A., Phys. Rev. B 46, 10086 (1992)Google Scholar
4. Mizuta, M., Fujieda, S., Matsumoto, Y., and Kawamura, T. Jpn. J. Appl. Phys. 25. L945 (1986).Google Scholar
5. Martin, G., Strite, S., Thornton, J., and Morkoç, H. Appl. Phys. Lett. 58, 21 (1991)Google Scholar
6. Paisley, M. J., Sitar, Z., Posthill, J. B., and Davis, R. F., J. Vac. Sci. Technol. A 7, 701 (1989).Google Scholar
7. Strite, S., Chandrasekhar, D., Smith, D. J., Sariel, J., Chen, H., teraguchi, N., and Morko, H.ç, [J. Cyrstal Growth vol. 127 (1993) p. 204–208]Google Scholar
8. Albanesi, E. A., Lambrecht, W. R. L., and Segall, B., Phys. Rev. B 48, 17841 (1993).Google Scholar
9. Lambrecht, W. R. L. and Segall, B., Phys. Rev. B 41, 8353 (1990).Google Scholar
10. Resta, R., Baldereschi, A., and Baroni, S., J. chimie physique 86, 789 (1989).Google Scholar
11. Lambrecht, W. R. L. and Segall, B., in [2], p. 367.Google Scholar
12. Albanesi, E.A., Lambrecht, W.L. and Segall, B., to be published.Google Scholar
13. Andersen, O. K., Jepsen, O., and Šob, M., Electronic Band Structure and its Applications, Ed. Yussouff, M., Springer, Heidelberg, 1987, p. 1 Google Scholar
14. Hedin, L. and Lundqvist, B. I. J. Phys. C 4, 2064 (1971).Google Scholar
15. Lambrecht, W. R. L., Segall, B., and Andersen, O. K., Phys. Rev. B 41, 2813 (1990).Google Scholar
16. Monkhorst, H. J. and Pack, J. D., Phys. Rev. B 13, 5188 (1976).Google Scholar
17. Albanesi, E.A., Lambrecht, W.L. and Segall, B., in press, J. Vac. Sci. Technol. (1994).Google Scholar
18. Cardona, M. and Christensen, N. E., Phys. Rev. B 35, 6182 (1987).Google Scholar
19. Kim, K., Lambrecht, W. R. L. and Segall, B., Bull. Am. Phys. Soc. 39, 334 (1994), and to be published.Google Scholar
20. Lambrecht, W. R. L. and Segall, B., in Properties of the Group-Ill Nitrides, edited by Edgar, J. H., EMIS Data Review Series, (IEE, Stevenage Herts, UK 1994), in press.Google Scholar
21. Kane, E. O., Phys. Rev. 178 1368 (1969).Google Scholar
22. Martin, G., Strite, S., Botchkarev, A., Agarwal, A., Rockett, A., Lambrecht, W., Segali, B. and Morkoç, H., to be published in Appl. Phys. Lett., 1994.Google Scholar
23. Schneider, J., private communication.Google Scholar
24. Langer, J. M. and Heinrich, M., Phys. Rev. Lett. 55, 1414 (1985).Google Scholar
25. Ren, S.Y. and Dow, J.D., Mat. Res. Soc. Symp. Proc, 281, 775 (1992).Google Scholar
26. Sitar, Z.. Paisley, M. J., Yan, B., Davis, R. F., Ruan, J., and Choyke, W. J.. Thin Solid Films 200, 311 (1991).Google Scholar
27. Itoh, K., Kawamoto, T., Amano, H., Hiramatsu, K., and Akasaki, I., Jpn. J. Appl Phys. 30, 1924 (1991).Google Scholar