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B(Ch3)3 as P Layer Doping Gas

Published online by Cambridge University Press:  25 February 2011

D. S. Shen,
H. Chatham and
R. E. I. Schropp
D. S. Shen
Affiliation:
Glasstech Solar, Inc., 6800 Joyce Street, Golden, CO 80403, USA
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Abstract

The boron doped p-layer is a critical part of a-Si:H solar cells. Trimethylboron (B(CH3)3) has been suggested to be a better doping gas and has a better thermal stability than B2H6. Single junction a-Si:H solar cells and a-Si:H/a-Si:H tandem cells with the p-layers deposited using B(CH3)3 have resulted in conversion efficiencies of 11.4% and 10.4%, respectively. Using these new p+-layers, we also reached 10% efficiencies in single junction a-Si:H solar cells with the i-layer deposited at a high deposition rate of ∼ 2 nm/s from either SiH4 or Si2H6 as a source gas.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990, 523
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

Yamanaka, S., Konagai, M. and Takahashi, K., Proc. of 20th IEEE Photovoltaic Specialist Conference (IEEE, Las Vegas, 1988), p. 160.Google Scholar
Roca i Cabarrocas, P., Kumar, S. and Drevillon, B., J. Appl. Phys., Sept. 15, 1989.Google Scholar
Tarui, H., Matsyama, T., Okamoto, S., Hishikawa, Y., Dohjo, H., Nakamura, N., Tsuda, S., Nakano, S., Ohnishi, M. and Kuwano, Y., Technical Digest of 3rd International Photovoltaic Science and Engineering Conference, p. 41, 1987.Google Scholar
4. Catalano, A., Arya, R., Bennett, M., Yang, L., Morris, J., Golgstein, B., Fieselman, B., Newton, J. and Wiedman, S., Solar Cells, 27, 25 (1989)Google Scholar
5. Zhongyan, Wu, Lloret, A., Siefert, J.M., Roca i Cabarrocas, P. and Equer, B., in Amorpohous Silicon Technology - 1989, edited by Madan, A., Thompson, M.J., Taylor, P.C., Hamakawa, Y. and LeComber, P.G. (Mater. Res. Soc. Pro. 149, Pittsburgh, PA 1989), pp. 291–296.Google Scholar
6. See e.g., Bhat, P.K., Marshall, C., Sandwisch, J., Chatham, H., Schropp, R.E.I., and Madan, A., Proc. of 20th IEEE Photovoltaic Specialist Conference (IEEE, Las Vegas, 1988), p. 91.Google Scholar
7. Shen, D.S., Schropp, R.E.I., Chatham, H., Hollingsworth, R.E., Bhat, P.K. and Xi, J., accepted for publication in Appl. Phys. Lett.Google Scholar
8. Shen, D.S.. Chatham, H. and Bhat, P.K., to be published.Google Scholar