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Beam Recrystallized Silicon-On-Insulator Devices

Published online by Cambridge University Press:  15 February 2011

H. W. Lam
H. W. Lam*
Affiliation:
Central Research Laboratories, Texas Instruments Incorporated MS, 944, P. 0. Box 225621, Dallas, Texas 75265
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Abstract

Beam-recrystallized silicon-on-insulator is an attractive material for VLSI integrated circuit and flat panel display applications. This paper describes the electrical characteristics that are unique to MOSFETs fabricated in this material. The back-interface between the silicon and the insulator significantly affects the leakage current by acting as a possible leakage path, depending on the charge at the back interface and the doping concentration in the silicon close to the back interface. In addition, enhanced arsenic diffusion along grain boundaries can cause short circuits between the source and the drain of an n-channel MOSFET. Evidence of such enhanced diffusion are presented as well as means to reduce the impact of the problem. It is shown that molecular hydrogen can be used to passivate the grain-boundaries in the recrystallized silicon material, thereby increasing the carrier mobility. A profile of the carrier mobility as a function of depth from the surface of the silicon is presented, showing that the carrier mobility is not reduced significantly, even close to or at the back interface.

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