Hostname: page-component-7b7567c8c-tnzcf Total loading time: 0 Render date: 2026-11-14T21:48:08.548Z Has data issue: false hasContentIssue false
  • English
  • Français

Bonding at the CaF2-on-Si(111) Interface

Published online by Cambridge University Press:  25 February 2011

Marjorie A. Olmsteadt,
R. D. Bringans,
R. I. G. Uhrberg and
R. Z. Bachrach
Marjorie A. Olmsteadt
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. D. Bringans
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. I. G. Uhrberg
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. Z. Bachrach
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Get access

Abstract

The bonding at the interface between CaF2 and Si(111) has been investigated using core-level photoemission spectroscopy. The results are discussed in terms of various structural models of the interface. The stable interface has a depletion of fluorine from the interface resulting in strong Si - Ca bonding.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987, 195
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Phillips, J. M., Manger, M. L., Pfeiffer, L., Joy, D. C., Smith, T. P., III, Augustiniak, W. M., and West, K. W., Mat. Res. Soc. Symp. Proc. 53, 155 (1986); L. J. Schowalter, private communication.CrossRefGoogle Scholar
2. Satpathy, S. and Martin, R. M., Bull. Amer. Phys. Soc. 32, 865 (1987); and private communication.Google Scholar
3. Ponce, F. A., Anderson, G. B., O'Keefe, M. A., and Schowalter, L. J., J. Vac. Sci. Technol. B 4, 1121 (1986)CrossRefGoogle Scholar
4. Seel, M. and Bagus, P. S., Phys. Rev. B 34, 2023 (1983).Google Scholar
5. Olmstead, M. A., Uhrberg, R. I. G., Bringans, R. D., and Bachrach, R. Z., Phys. Rev. B35 (May 15, 1987); J. Vac. Sci. Technol B4, 1123 (1986).Google Scholar
6. McFeely, F. R., Morar, J. F., Shinn, N. D., Landgren, G., and Himpsel, F. J., Phys. Rev. B 30, 764 (1984).Google Scholar
7. Franciosi, A., Weaver, J. H., and Peterson, D. T., Phys. Rev. B 31, 3606 (1985).Google Scholar
8. Himpsel, F. J., Hillebrecht, F. U., Hughes, G., Jordan, J. L., Karlsson, U. O., McFeely, F. R., Morar, J. F., and Rieger, D., Appl. Phys. Lett. 48, 596 (1986).Google Scholar
9. Olmstead, M. A., Bringans, R. D., Uhrberg, R. I. G., and Bachrach, R. Z., Phys. Rev. B 34, 6401 (1986).Google Scholar
10. Rieger, D., Himpsel, F. J., Karlsson, U. O., McFeely, F. R., Morar, J. F., and Yarmoff, J. A., Phys. Rev. B 34, 7295 (1986).Google Scholar
11. Kanemaru, S., Ishiwara, H., and Furukawa, S., this symposium, paper D4.4.Google Scholar