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Bonding Defects in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  10 February 2011

G. Lucovsky and
H. Yang
G. Lucovsky
Affiliation:
Departments of Physics, Chemistry, Materials Science and Engineering and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202 (GerryLucovsky@ncsu.edu)
H. Yang
Affiliation:
Departments of Physics, Chemistry, Materials Science and Engineering and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202 (GerryLucovsky@ncsu.edu)
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Abstract

A mechanism for charged-carrier-trapping-inducedde fect metastability in hydrogenated amorphous silicon (a-Si:H) and in hydrogenated amorphous silicon alloys containing relatively high concentrations of oxygen and/or nitrogen atoms (a-Si:X:H, X = O or N) is described. The experimental results that identified this defect metastability mechanism were i) differences in the Staebler-Wronski effect in a-Si:H and a-Si:N:H alloys prepared from N2 and NH3 source gases by remote plasma-enhanced chemical-vapor deposition, and ii) differences in defect generation at N-atom terminated Si-SiO2 interfaces prepared from NH3 and N2O.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996, 629
Copyright
Copyright © Materials Research Society 1996

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