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Carbon Doping in InGaAs grown by MBE

Published online by Cambridge University Press:  25 February 2011

Hiroshi Ito and
Tadao Ishibashi
Hiroshi Ito
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01 JAPAN
Tadao Ishibashi
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01 JAPAN
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Abstract

Carbon doping in InxGa1-xAs is investigated using solid source MBE. InAs mole fractions, x, from 0 to 1 are tested. Under a constant doping level, hole concentration decreases with increasing x. When x is higher than 0.6, the conduction type is n and electron concentration increases with x. The conduction-type inversion and the behavior of carrier mobilities are explained by a self-compensation mechanism.

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