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Carbon Nanotube-Based Vacuum Microelectronic Gated Cathode

Published online by Cambridge University Press:  10 February 2011

Xueping Xu and
George R. Brandes
Xueping Xu
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810-4169, Email:, xxu@atmi.com
George R. Brandes
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810-4169
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Abstract

A vacuum microelectronic device containing carbon nanotube electron field-emitters was developed and tested. The gated cathode was fabricated using conventional microelectronics fabrication techniques and a final, self-aligned, in situ carbon nanotube growth step. To our knowledge, this is the first vacuum microelectronics device with carbon nanotube field-emitters grown in situ with a catalytic growth process. The turn-on voltage of the cathode was less than 20 volts and the emission current density at 50 volts was as high as 9 mA-cm−2. The fabrication process, device performance, manufacturing issues and cathode applications will be discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 509: Symposium C – Materials Issues in Vacuum Microelectronics , 1998, 107
Copyright
Copyright © Materials Research Society 1998

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References

1 Spindt, C. A., Brodie, I., Humphrey, L., and Westerberg, E. R., J. Appl. Phys. 47, 5248 (1976).Google Scholar
2 Jiang, W.M., et al, IEEE Electron Device Lett., 14, 143 (1993).Google Scholar
3 Williams, B.F., et al, Appl. Phys. Lett., 14, 214 (1969).Google Scholar
4 Shade, H., et al, Appl. Phys. Lett., 20, 385 (1972).Google Scholar
5 Dai, H., Wong, E.W., and Lieber, C.M., Science 272, 523 (1996).Google Scholar
6 Rinzler, A.G., Hafner, J.HH., Nikolaev, P., Lou, L., Kim, S.G., Tomanek, D., Nordlander, P., Colbert, D.T., Smalley, R.E., Science, 269, 1550 (1995).Google Scholar
7 Heer, W.A. de, Chatelain, A and Ugarte, D., Science 270, 1179 (1995).Google Scholar
8 Ebbesen, T.W. and Ajayan, P.M., Nature, 358 220 (1992).Google Scholar
9 Heer, W.A. de, Bacsa, W.S., Chatelain, A., Gerfin, T., Humphrey-Baker, R., Forro, L., Ugarte, D., Science 268, 845 (1995).Google Scholar
10 Li, W., Zhang, H., Wang, C., Zhang, Y., Xu, L., Zhu, K. and Xie, S., Appl. Phys. Lett. 70, 2684 (1997)Google Scholar
11 Itoh, S., Watanabe, T., Ohtsu, K., Yokoyama, M. and Taniguchi, M., Jpn. J. Appl. Phys. 32, 3955 (1993).Google Scholar