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Changes in hydrogenated amorphous silicon upon extensive light-soaking at elevated temperature

Published online by Cambridge University Press:  17 March 2011

N. Hata,
C. M. Fortmann and
A. Matsuda
N. Hata
Affiliation:
National Institute of Advanced Industrial Science and Technology, AIST Central 2, Tsukuba, Ibaraki 305-8568, Japan
C. M. Fortmann
Affiliation:
Dept. Applied Mathematics, State University of New York at Stony Brook, Stony Brook, NY 11794-3600, USA
A. Matsuda
Affiliation:
National Institute of Advanced Industrial Science and Technology, AIST Central 2, Tsukuba, Ibaraki 305-8568, Japan
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Abstract

Previously a through the substrate ellipsomtery technique was used to study the high temperature dynamics of light induced reversible changes in amorphous silicon thin films [1]. Since this technique was based on above gap optical changes it is sensitive to the structural aspects of the light induced effects, differently from the below-gap absorption techniques which detect dangling-bond defect states [2-3]. It was found that high intensity light soaking at an elevated temperature causes surprising large, reversible, changes [1]. By comparing these optical changes with the changes in dangling bond concentrations probed by electronic and below gap methods, a fuller picture of temperature dependent light-induced defect creation and annealing dynamics emerges. A high temperature high intensity light soaking method is developed which reduces saturation times, decreases the saturated dangling bond density, as well as decreases the annealing activation energy. These results are discussed in terms of the coupling between network disorder and its relaxation with respect to defect concentrations at high temperature.

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References

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