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Characterization of Polycrystalline Silicon Multilayers with thin Nitride/Oxide Films Using Spectroscopic Ellipsometry

Published online by Cambridge University Press:  22 February 2011

L.M. Asinovsky
L.M. Asinovsky*
Affiliation:
Rudolph Research, Flanders, NJ 07836
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Abstract

Spectroscopic ellipsometry has been used to characterize oxide/poly-Si/oxide with thin nitride/oxide layer. Films were deposited on Si substrate using low-pressure chemical vapor deposition (LPCVD) techniques. The measurements were taken at angles of incidence of 65 and 70 degrees in the wavelength range from 300 to 800 nm. The analysis of the data using effective medium and two-dimensional Lorentz oscillator approximations identified complete recrystallization of the poly-Si after annealing and and its transformation to µ c-Si. Three wafers taken at the sequential stages of the manufacturing process were studied. Although parameters of the thin nitride/oxide layers are strongly correlated, reasonable estimates of the thicknesses were found. The resuilts were consistent with the measured Auger electron spectroscopy (AES) profiles.

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