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Characterization of SiC grown on Ge modified silicon substrates

Published online by Cambridge University Press:  21 March 2011

J. Pezoldt,
Th. Stauden,
Ch. Förster and
P. Masri
J. Pezoldt
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, Postfach 100565, D-98684 Ilmenau, Germany
Th. Stauden
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, Postfach 100565, D-98684 Ilmenau, Germany
Ch. Förster
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, Postfach 100565, D-98684 Ilmenau, Germany
P. Masri
Affiliation:
Universite de Montpellier, Groupe d'Etude des Semiconducteurs, 12 Place Eugene Bataillon, 34095 Montepellier CEDEX 5, France
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Abstract

Silicon carbide layers were grown by solid source molecular beam epitaxy on silicon (111). Prior to the silicon carbide growth different amounts of germanium were predeposited on the silicon surface. Structural and morphological investigations with reflection high energy electron diffraction, x-ray diffraction, atomic force microscopy and spectroscopic ellipsometry revealed an improvement of the surface and interface properties for Ge coverages around and below 1 ML. The improved structural properties of the heterojunction lead to an amendment of the forward and reverse properties of the SiC/Si heterojunction.

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