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Characterization of SinGem Strained Layer Superlattice P-N Junctions

Published online by Cambridge University Press:  25 February 2011

Jesper Engvall,
Janos Olajos,
Hermann G. Grimmeiss,
Hartmut Presting,
Horst Kibbel and
Erich Kasper
Jesper Engvall
Affiliation:
Dept.of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden
Janos Olajos
Affiliation:
Dept.of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden
Hermann G. Grimmeiss
Affiliation:
Dept.of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden
Hartmut Presting
Affiliation:
Daimler-Benz AG, Research center, Wilhelm-Runge-Str. 11, D-7900 Ulm, Germany
Horst Kibbel
Affiliation:
Daimler-Benz AG, Research center, Wilhelm-Runge-Str. 11, D-7900 Ulm, Germany
Erich Kasper
Affiliation:
Daimler-Benz AG, Research center, Wilhelm-Runge-Str. 11, D-7900 Ulm, Germany
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Abstract

A series of three p-n junctions consisting of ten monolayer strain adjusted SinGem superlattices (Si6Ge4, Si5Ge5, Si4Ge6) has been characterized with respect to Current-Voltage, Capacitance-Voltage and Short Circuit Photocurrent measurements. The samples were grown by MBE with an Antimony surfactant resulting in improved interface sharpness. Superlattice interband transitions were measured by Short Circuit Current spectroscopy and bandgap energies were determined by a fitting procedure. The temperature dependence of the junction capacitance and of the Short Circuit Current indicate a potential barrier for electrons at the superlattice-buffer interface that impedes electron transport from the p-n junction at lower temperatures.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993, 129
Copyright
Copyright © Materials Research Society 1993

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