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Charge Separation Between Strain Coupled Quantum Dots in a Self-Assembled InAs Quantum Dot Structure

Published online by Cambridge University Press:  10 February 2011

W. V. Schoenfeld,
T. Lundstrom and
P. M. Petroff
W. V. Schoenfeld
Affiliation:
Materials Department, Univ. of California, Santa Barbara, CA 93117 email: 6500wvs0@ucsbuxa.ucsb.edu
T. Lundstrom
Affiliation:
Materials Department, Univ. of California, Santa Barbara, CA 93117
P. M. Petroff
Affiliation:
Materials Department, Univ. of California, Santa Barbara, CA 93117
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Abstract

We present an InAs QDs structure designed to separate and store photo-generated electron-hole pairs. Charge separation in the structure is demonstrated using power dependent photoluminescence and biased photoluminescence. Preliminary data from time resolved photoluminescence suggest storage times in the device in the μsec range.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999, 153
Copyright
Copyright © Materials Research Society 2000

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References

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