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Charging Effect in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride

Published online by Cambridge University Press:  17 March 2011

Nae-Man Park,
Sang-Hun Jeon,
Hyunsang Hwang,
Suk-Ho Choi and
Seong-Ju Park
Nae-Man Park
Affiliation:
Kwangju Institute of Science and Technology, Dept of Materials Science and Engineeting and Center for Optoelectronic Materials Research, Kwangju, 500-712, Korea
Sang-Hun Jeon
Affiliation:
Kwangju Institute of Science and Technology, Dept of Materials Science and Engineeting and Center for Optoelectronic Materials Research, Kwangju, 500-712, Korea
Hyunsang Hwang
Affiliation:
Kwangju Institute of Science and Technology, Dept of Materials Science and Engineeting and Center for Optoelectronic Materials Research, Kwangju, 500-712, Korea
Suk-Ho Choi
Affiliation:
School of Electronics and Information and Institute of Natural Sciences, Kyung Hee University, Suwon, 449-701, Korea
Seong-Ju Park
Affiliation:
Kwangju Institute of Science and Technology, Dept of Materials Science and Engineeting and Center for Optoelectronic Materials Research, Kwangju, 500-712, Korea
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Abstract

Capacitance-voltage was investigated for amorphous silicon quantum dots (a-Si QDs) embedded in a silicon nitride as a function of dot size and nitride thickness. a-Sci QDs were grown by plasma enhanced chemical vapor deposition. The electron charging was decreased as the dot size was decreased. These results showed that the conduction band shift is larger than the valence band shift as the dot size decreased and, as a result, electrons are easily discharged in a-Si QDs due to the lower barrier height. For high dot-density-sample, the capacitance-voltage curves were also shifted toward the negative voltage direction when a higher forward bias was applied at forward condition due to the transfer of electrons trapped in the a-Sci QDs from the a-Sci QDs near Si substrate to those near the top metal.

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