Hostname: page-component-7b7567c8c-kwt9d Total loading time: 0 Render date: 2026-11-13T23:00:46.778Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical Kinetics Models for Semiconductor Processing

Published online by Cambridge University Press:  10 February 2011

Michael E. Coltrin,
Ellen Meeks,
Joseph F. Grcar,
William G. Houf,
Robert J. Kee and
J. Randall Creighton
Michael E. Coltrin
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87175
Ellen Meeks
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
Joseph F. Grcar
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
William G. Houf
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
Robert J. Kee
Affiliation:
Colorado School of Mines, Golden, CO 80401
J. Randall Creighton
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87175
Get access

Abstract

Chemical reactions in the gas-phase and on surfaces are important in the deposition and etching of materials for microelectronic applications. A general software framework for describing homogeneous and heterogeneous reaction kinetics utilizing the Chemkin suite of codes is presented. Experimental, theoretical and modeling approaches to developing chemical reaction mechanisms are discussed. A number of TCAD application modules for simulating the chemically reacting flow in deposition and etching reactors have been developed and are also described.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Kee, R.J., Rupley, F.M., Meeks, E., and Miller, J.A., Sandia National Laboratories Report, SAND96–8216(1996).Google Scholar
2. Gordon, S. and McBride, B. J., NASA SP-273 (1971).Google Scholar
3. Coltrin, M.E., Kee, R.J., Rupley, F.M., and Meeks, E., Sandia National Laboratories Report, SAND96–8217 (1996).Google Scholar
4. Coltrin, M. E., Kee, R. J., and Rupley, F. M., Int. J. Chem. Kinet. 23, 1111 (1991).Google Scholar
5. Kee, R. J., Dixon-Lewis, G., Warnatz, J., Coltrin, M. E., and Miller, J. A., Sandia National Laboratories Report, SAND86–8246 (1986).Google Scholar
6. Creighton, J.R. and Parmeter, J.E., CRC Crit. Rev. Solid State Mat. Sci. 18, 175 (1993).Google Scholar
7. Dubois, L.H., Bent, B.E., and Nuzzo, R.G., in Surface Reactions, Springer Series in Surface Sciences, edited by Madix, R.J. (Springer, Berlin, 1993).Google Scholar
8. Yates, J.T. Jr, in Solid State Physics: Surfaces. Vol. 22, edited by Park, R.L. and Lagally, M.G. (Academic Press, Orlando, 1985) p. 425.Google Scholar
9. White, J.M., Appl. Surface Sci. 26, 392, (1986).Google Scholar
10. Bell, A.T., in Vibrational Spectroscopy of Molecules on Surfaces, edited by Yates, J.T. Jr and Madey, T.E. (Plenum, New York, 1987) p. 105.Google Scholar
11. Hougen, O.A. and Watson, K.M., in Chemical Process Principles. Part 3., Kinetics and Catalysis (Wiley, New York, 1947).Google Scholar
12. Tomkins, F.C., Chemisorption of Gases on Metals (Academic Press, London, 1978), ch. 7.Google Scholar
13. Morris, M.A., Bowker, M., and King, D.A., in Comprehensive Chemical Kinetics. Vol. 19, edited by Bamford, C.H., Tipper, C.F.H., and Compton, R.G. (Elsevier, Amsterdam, 1984), chap. 1.Google Scholar
14. Weinberg, W.H., in Springer Series in Surface Sciences. Vol. 8, edited by Grunze, M. and Kreuzer, H.J. (Springer, Berlin, 1987), p. 84.Google Scholar