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Chemistry and Solid State Physics of Microcrystalline Silicon

Published online by Cambridge University Press:  21 February 2011

Stan Vepřek
Stan Vepřek*
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenberstr. 4, D-8046 Garching-Munich, F.R.G
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Abstract

Various methods for the preparation of microcrystalline (nanocrystalline) silicon are summarized and compared with respect to the possibility of the control of the materials quality and scaling of the deposition process to large area applications. It is shown that the deposition of a pure microcrystalline material is achieved under conditions close to partial chemical equilibrium. The mechanism of the crystallization during the growth will be briefly discussed.

The second part of the paper deals with the physical properties of pure microcrystalline silicon which is free of any amorphous phase detectable by X-ray diffraction, i.e. less than about 1 vol%. Several aspects of electric conductivity, optical absorption and Raman scattering which have been frequently misinterpreted in the literature will be reviewed.

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