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Closed-Loop Thickness Control of Resonant-Tunneling Diode Mbe Growth Using Spectroscopic Ellipsometry

Published online by Cambridge University Press:  15 February 2011

F. G. Celii
Affiliation:
Corporate Research, Texas Instruments, M/S 147, P. 0. Box 655936, Dallas, TX 75265; celii@resbld.csc.ti.com
Y.-C. Kao
Affiliation:
Corporate Research, Texas Instruments, M/S 147, P. 0. Box 655936, Dallas, TX 75265; celii@resbld.csc.ti.com
T. S. Moise
Affiliation:
Corporate Research, Texas Instruments, M/S 147, P. 0. Box 655936, Dallas, TX 75265; celii@resbld.csc.ti.com
M. Woolsey
Affiliation:
Corporate Research, Texas Instruments, M/S 147, P. 0. Box 655936, Dallas, TX 75265; celii@resbld.csc.ti.com
T. B. Harton
Affiliation:
Corporate Research, Texas Instruments, M/S 147, P. 0. Box 655936, Dallas, TX 75265; celii@resbld.csc.ti.com
K. Haberman
Affiliation:
Corporate Research, Texas Instruments, M/S 147, P. 0. Box 655936, Dallas, TX 75265; celii@resbld.csc.ti.com
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Abstract

The room temperature electrical characteristics of AlAs/InGaAs/InAs resonant-tunneling diode (RTD) devices are sensitive to sub-monolayer thickness changes, and present a challenging case for closed-loop control. We prepared stacked RTD structures by MBE in which the strained AlAs barrier thicknesses were controlled based on an in situ spectroscopic ellipsometry (SE) system. The short-term and long-term reproducibility of RTDs grown under SE-based control was compared with similar samples grown by “dead-reckoning” (timing-based shutter openings coupled with pre-growth flux calibrations). SE-based calibration can compensate for long-term flux drift, but closed-loop thickness control did not provide a significant improvement over deadreckoning in terms of short-term RTD reproducibility.

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