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Comparative Cu Diffusion Studies in Advanced Metallizations of Cu and Al-Cu Based Thin Films

Published online by Cambridge University Press:  25 February 2011

D. Gupta
D. Gupta*
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA
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Abstract

Availability of diffusion data is important in the evaluation of the prospect of substituting Cu for Al-Cu metallization for improving electrical and electromigration performance. Measurements have been made of 67Cu radioactive tracer diffusion in Cu, Cu-0.4Zr and several Al-Cu thin films of commonly used compositions. Grain boundary self diffusion in Cu is described by δDb= 1.5xl0-9 exp( — 0.92eV/kT) cm3/ sec. The activation energy for Cu diffusion in Al, Al-l%Cu and Al-0.5Cu-0.15Ti thin films depends on the amount of Cu present and varies in the 0.4 - 1.0 eV range. The measured diffusion parameters in the two alloy systems are compared and contrasted with those available from electromigration studies.

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