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Complex Diameter Modulations in Silicon Carbide Nanowire Growth

Published online by Cambridge University Press:  01 February 2011

Hideo Kohno and
Hideto Yoshida
Hideo Kohno
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1–1 Machikaneyama, Toyonaka, Osaka 560–0043, JAPAN
Hideto Yoshida
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1–1 Machikaneyama, Toyonaka, Osaka 560–0043, JAPAN
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Abstract

Silicon carbide nanowires were grown via a self-organized process. Some of the nanowires showed complex diameter fluctuations. The fluctuation was studied from the viewpoints of random walk and fractal. Power spectrum analysis of a fluctuation revealed that the fluctuation was not periodic and that the spectrum was colored. The distribution of increments had a fat tail which was not Gaussian but obeyed power law. Thus the diameter fluctuation was interpreted as a Lévy Flight. In addition, the fluctuation also showed multiaffine scaling.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004, F9.5
Copyright
Copyright © Materials Research Society 2005

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