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A Comprehensive Defect Model for Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

N. Hata,
E. Larson,
J. Z. Liu,
Y. Okada,
H. R. Park and
S. Wagner
N. Hata
Affiliation:
On leave from the Electrotechnical Laboratory, Ibaraki 305, Japan
E. Larson
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544.
J. Z. Liu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544.
Y. Okada
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544.
H. R. Park
Affiliation:
Present address: Mokpo National University, Muan, Chonnam, Korea
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544.
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Abstract

Based upon the thermal-equilibration theory and the annealing of defects introduced at the growing surface of amorphous silicon, the distribution of defect-states in energy and in space is calculated for a comprehensive set of deposition and post-deposition treatment parameters. We include the growth temperature, growth rate, illumination time, illumination intensity, annealing temperature, and annealing time. We compare the theoretical results with experimental data for the dark-conductivity-activation energy and for the fill factor of a solar cell. Agreement between the modelled and the experimental results reconfirms the validity of the assumptions made, and encourages further application of the model to analyses of a wide variety of amorphous silicon devices.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990, 285
Copyright
Copyright © Materials Research Society 1990

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References

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