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Computer Simulation Study of Thin Film Formation Process

Published online by Cambridge University Press:  21 February 2011

Yasushi Sasajima
Affiliation:
Ibaraki University, Faculty of Engineering, 4–12–1 Nakanarusawa-cho, Ibaraki, Hitachi 316, Japan
Satoru Ozawa
Affiliation:
Ibaraki University, Faculty of Engineering, 4–12–1 Nakanarusawa-cho, Ibaraki, Hitachi 316, Japan
Ryoichi Yamamoto
Affiliation:
Tokyo University, Research Center for Advanced Science and Technology, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
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Abstract

The thin film formation process was studied by the molecular dynamics(MD) method and by the hybrid method which combined the MD method with the Monte Carlo(MC) simulation technique. The Morse potential was assumed as the atomic interaction model. The substrate temperature was changed to see its effect on the film structure. The MD simulation found that the reconstruction process of the deposited nuclei was essential to determine the metastable film structure and that the relaxed atomic arrangements were strongly dependent on the depth of the interaction potentials. The hybrid method simulated the high rate deposition process and confirmed the results of the MD simulation.

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Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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