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Control of Bipolar Junction Transistor Current Grain Using Rapid Thermal Processing.

Published online by Cambridge University Press:  28 February 2011

A. Kermani,
F. Van Gieson,
S. Litwin,
R. Sullivan,
T. J. DeBolske and
J.L. Crowley
A. Kermani
Affiliation:
Peak Systmns' Inc., Fremont, CA 94538
F. Van Gieson
Affiliation:
National Semiconductor, Santa Clara, CA 95051
S. Litwin
Affiliation:
Motorola Inc. Mesa, AZ 85202
R. Sullivan
Affiliation:
Motorola Inc. Mesa, AZ 85202
T. J. DeBolske
Affiliation:
Peak Systmns' Inc., Fremont, CA 94538
J.L. Crowley
Affiliation:
Peak Systmns' Inc., Fremont, CA 94538
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Abstract

The activation of ion implanted emitters for two types of NPN bipolar junction transistors ( BJT ) by rapid thermal processing (RTP) was evaluated. The dopant profiles and the resultant junction depths were measured for various thermal cycles, using spreading resistance profile technique. The electrical characteristics of the transistors were then determined and compared to the standard furnace processes. The common emitter current gain values, hFE, for arsenic emitters were low and phosphorous emitters exhibited improved or comparable betas. The breakdown voltages in common emitter configuration, BV,CEO, BVcEs and BVEBO were comparable or better than the furnace annealed samples and no evidence of transistor leakage was observed.

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References

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