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CoSi2/Si(111) Interface Structure and its Influence on the Schottky Barrier

Published online by Cambridge University Press:  03 September 2012

J. P. Sullivan,
W. R. Graham,
F. Schrey,
D. J. Eaglesham,
R. Kola and
R. T. Tung
J. P. Sullivan
Affiliation:
Univ. of Pennsylvania, Dept. of Materials Science, Philadelphia, PA 19104
W. R. Graham
Affiliation:
Univ. of Pennsylvania, Dept. of Materials Science, Philadelphia, PA 19104
F. Schrey
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. J. Eaglesham
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. Kola
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. T. Tung
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

The interface structure and Schottky barrier height Of CoSi2/Si(111) interfaces may be controlled by manipulating the thin film growth conditions. Single crystal CoSi2 films on Si(111) were prepared by ultra-high vacuum processing, analyzed electrically by currentvoltage techniques, and characterized structurally by plan-view and cross-section high resolution transmission electron microscopy (HRTEM) and transm-ission electron diffraction (TED). Interfaces exhibiting n-type barrier heights ranging from 0.27 to 0.69 eV, and p-type barrier heights ranging from 0.43 eV to over 0.71 eV were prepared -by varying the processing conditions. HRTI3M and TED revealed the existence of a √3 × √3 interface reconstruction for the low barrier n-type/high barrier p-type samples. Possible models of the interface reconstruction are discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993, 249
Copyright
Copyright © Materials Research Society 1994

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References

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