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Creep Behavior of Spuitered TiN Films Using Indentation Testing

Published online by Cambridge University Press:  16 February 2011

V. Raman and
R. Berriche
V. Raman
Affiliation:
IBM Corporation, General Products Division, San Jose, CA 95193.
R. Berriche
Affiliation:
Dept. of Geology and Geophysics, University of Minnesota, Minneapolis, MN 55455.
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Abstract

Tin films were deposited on silicon substrates by RF diode sputtering and the growth behavior of these films were characterized by scanning electron microscopy. The time dependent plastic flow behavior in these films were examined by performing indentation tests using a dcpth-scnsing hardness testing machine. Individual indentation experiments with different constant load segments were conducted and the creep characteristics of both sputtered films and bulk Sn were examined. The stress exponents determined from these tests were compared with those determined for bulk Sn from conventional creep tests. The influence of the substrate material on the creep properties of the film are described.

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References

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