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Crystallization in Metal-Metalloid Multilayers

Published online by Cambridge University Press:  15 February 2011

R. Sinclair,
T. J. Konno,
T. Itoh and
N. C. Zhu
R. Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
T. J. Konno
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
T. Itoh
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
N. C. Zhu
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
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Abstract

We have studied the reactions which occur in metal-metalloid multilayers made from elements which have binary eutectic phase diagrams. The metal mediates crystallization of the amorphous as-deposited metalloid by crystal nucleation inside the metal layer followed by rapid diffusion through the metal from amorphous to crystalline phases. The metalloid crystallization temperature is significantly reduced by this reaction. Systems showing this behavior are Al-Si, Ag-Si, Ag-Ge, Co-C, Ni-C and Fe-C. We believe, therefore, that it is a general phenomenon which we have now extended to the case of Ag-SiC.

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References

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