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A μc-Si:H P-I-N Imager For 2-D Pattern Recognition

Published online by Cambridge University Press:  10 February 2011

J. Martins,
M. Fernandes,
F. Sousa,
P. Louro,
A. MaçArico and
M. Vieira
J. Martins
Affiliation:
Electronics and Communications Engineering Department, ISEL, R. Conselheiro Emidio Navarro, P 1949-014 Lisboa, Portugal. Tel: +351 1 8317181
M. Fernandes
Affiliation:
Electronics and Communications Engineering Department, ISEL, R. Conselheiro Emidio Navarro, P 1949-014 Lisboa, Portugal. Tel: +351 1 8317181
F. Sousa
Affiliation:
Electronics and Communications Engineering Department, ISEL, R. Conselheiro Emidio Navarro, P 1949-014 Lisboa, Portugal. Tel: +351 1 8317181
P. Louro
Affiliation:
Electronics and Communications Engineering Department, ISEL, R. Conselheiro Emidio Navarro, P 1949-014 Lisboa, Portugal. Tel: +351 1 8317181
A. MaçArico
Affiliation:
Electronics and Communications Engineering Department, ISEL, R. Conselheiro Emidio Navarro, P 1949-014 Lisboa, Portugal. Tel: +351 1 8317181
M. Vieira
Affiliation:
Electronics and Communications Engineering Department, ISEL, R. Conselheiro Emidio Navarro, P 1949-014 Lisboa, Portugal. Tel: +351 1 8317181. E-mail: mv@isel.pt
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Abstract

A TCO/ μc-p-i-n Si:H/AI imager is presented and analyzed. The μc-p-i-n Si:H photodiode acts as a sensing element. Contacts are used as an electrical interface. The image is acquired by a scan-out process. Sampling is performed on a rectangular grid, and the read-out of the photogenerated charges is achieved by measuring simultaneously both transverse photovoltages at the coplanar electrodes. The image representation in gray-tones is obtained by using low level processing algorithms. Basic image processing algorithms are developed for image enhancement and restoration.

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References

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