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CVD-Grown Graphene Solution-gated Field Effect Transistors for pH Sensing

Published online by Cambridge University Press:  21 March 2011

Benjamin Mailly Giacchetti,
Allen Hsu,
Han Wang,
Ki Kang Kim,
Jing Kong and
Tomas Palacios
Benjamin Mailly Giacchetti
Affiliation:
Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States.Materials Science, Massachusetts Institute of Technology, Cambridge, MA, United States.
Allen Hsu
Affiliation:
Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States.
Han Wang
Affiliation:
Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States.
Ki Kang Kim
Affiliation:
Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States.
Jing Kong
Affiliation:
Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States.
Tomas Palacios
Affiliation:
Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States.
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Abstract

This paper presents the fabrication technology and initial characterization of electrolyte-gated field effect transistor (FET) arrays based on CVD grown graphene on copper. We show that the graphene FET (GFET), when immersed in electrolytes, exhibit a transconductance around 5 mS/mm. From preliminary pH sensing experiments, a pH sensitivity of 24 mV/pH has been demonstrated.

Keywords

chemical vapor deposition (CVD) (chemical reaction)sensorelectrical properties

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References

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