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Decrease in Resistance of Ceria Oxygen Sensor Induced by 10 mol% Hf and Zr Doping

Published online by Cambridge University Press:  01 February 2011

Noriya Izu,
Woosuck Shin,
Ichiro Matsubara and
Norimitsu Murayama
Noriya Izu
Affiliation:
n-izu@aist.go.jp, National Institute of Advanced Industrial Science and Technology (AIST), Advanced Manufacturing Research Institute, 2266-98 Shimo-Shidami, Moriyama-ku, Nagoya, Aichi, 463-8560, Japan, +81-52-736-7108, +81-52-736-7244
Woosuck Shin
Affiliation:
w.shin@aist.go.jp
Ichiro Matsubara
Affiliation:
matsubara-i@aist.go.jp
Norimitsu Murayama
Affiliation:
n-murayama@aist.go.jp
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Abstract

Resistive type sensors using 10 mol% Hf-doped ceria and 10 mol% Zr-doped ceria, which had a single cubic phase obtained by solid state reaction, were fabricated and their sensing properties were investigated. The resistance and resistivity of the 10 mol% Hf-doped ceria or 10 mol% Zr-doped ceria were smaller than those of non-doped ceria. In the case of the same temperature of solid state reaction, the resistance and resistivity of the 10 mol% Hf-doped ceria were much smaller than those of the 10 mol% Zr-doped ceria. Furthermore, in the case of the same dopant, the resistance and resistivity of the sensor prepared from the solid state reaction at 1773 K were much smaller than those at 1673 K. The sensor using the 10 mol% Hf-doped ceria could be used as an oxygen gas sensor in wide oxygen partial pressure range and could be applicable to a λ sensor and a universal A/F sensor.

Keywords

Cesensorsemiconducting

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 888: Symposium V – Materials and Devices for Smart Systems II , 2005, 0888-V03-10
Copyright
Copyright © Materials Research Society 2006

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References

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