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Deep Level Defects in CdTe

Published online by Cambridge University Press:  25 February 2011

V. B. Leigh and
R. E. Kremer
V. B. Leigh
Affiliation:
Oregon Graduate Center, 19600 NW Von Neumann Dr., Beaverton, OR 97006
R. E. Kremer
Affiliation:
Oregon Graduate Center, 19600 NW Von Neumann Dr., Beaverton, OR 97006
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Abstract

We have used two complementary techniques to study deep trapping levels in CdTe single crystals. Samples of undoped, semi-insulating material and p-type material doped with phosphorus or cesium have been examined using transient spectroscopic techniques. Both capacitance transients (DLTS) and photocurrent transients (PITS) have been measured. The DLTS measurements showed several trapping levels in all of the specimens, while the PITS data usually revealed only a single level.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986, 241
Copyright
Copyright © Materials Research Society 1987

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References

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