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Deep Level Defects in Mg-Doped GaN

Published online by Cambridge University Press:  15 February 2011

Gyu-Chul Yi and
Bruce W. Wessels
Gyu-Chul Yi
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
Bruce W. Wessels
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
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Abstract

Deep level defects in Mg compensated GaN grown by metal-organic vapor phase epitaxy were investigated using photocapacitance spectroscopy measurements on Schottky barrier diodes. Addition of magnesium resulted in the formation of a series of deep centers with optical threshold energies of 1.0, 1.2, 1.8, and 3.1 eV. Upon annealing the epitaxial GCN in nitrogen at 850°C the ind-gap levels disappeared and only the trapping level at 3.1 eV remained. The mid-gap levels are ascribed to Mg dopant complexes which may in part be responsible for low doping efficiency of Mg in the as-grown, doped GaN. The deep level at 3.1 eV commonly observed from all Mgdoped GaN most likely involves the Mg acceptor. The photo-excited state of the 3.1 eV level had relaxation times of the order of 103 sec at 295 K.

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