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Defect Characterization by Junction Spectroscopy

Published online by Cambridge University Press:  15 February 2011

L. C. Kimerling
L. C. Kimerling*
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Junction spectroscopic techniques provide a unique tool for the study of imperfections in semiconductor materials. New, fundamental defect processes have been discovered and direct observations of the role of defects in device manufacture and operation have been made. The principles of application of capacitance transient spectroscopy, electroluminescence, and SEM-charge collection microscopy are briefly reviewed. Examples of singular accomplishments of these techniques are given, and directions of future research are outlined.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980, 85
Copyright
Copyright © Materials Research Society 1981

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References

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