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Defect Control in Cz Silicon

Published online by Cambridge University Press:  03 September 2012

F. G. Kirscht,
S. B. Kim,
J. J. Yeh and
P. D. Wildes
F. G. Kirscht
Affiliation:
Siltec Silicon, 1351 Tandem Avenue N.E., Salem, Oregon, 97303 P. Zaumseil
S. B. Kim
Affiliation:
Siltec Silicon, 1351 Tandem Avenue N.E., Salem, Oregon, 97303 P. Zaumseil
J. J. Yeh
Affiliation:
Siltec Silicon, 1351 Tandem Avenue N.E., Salem, Oregon, 97303 P. Zaumseil
P. D. Wildes
Affiliation:
Institute of Semiconductor Physics, Frankfurt/Oder, Walter Korsing Str. 2, Germany
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Abstract

Generic and interaction aspects of oxygen precipitation, related defect formation and denudation in Cz-Si wafers are presented. Bulk defect profiles and homogenization control are shown to be achievable by proper design of post-growth annealing.

Gettering-related phenomena are discussed including stacking fault-rich bulk defect structures and peculiarities in different epitaxy systems.

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References

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