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Defect Reactions and Atomic Diffusion in Silicon

Published online by Cambridge University Press:  28 February 2011

Sokrates T. Pantelides
Sokrates T. Pantelides*
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Atomic diffusion is generally mediated by intrinsic defects such as vacancies and self-interstitials. In this paper we give a critical review of the relevant properties of intrinsic defects in Si as they have been determined by experiments and recent theoretical calculations. We then review the role of these defects in mediating self-diffusion and dopant impurity diffusion both under equilibrium and non-equilibrium conditions. A systematic and internally consistent picture emerges, but many processes, such as oxidation-modified and nitridation-modified diffusion require more systematic data for detailed understanding.

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