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Defect Structure and Properties by Junction Spectroscopy

Published online by Cambridge University Press:  28 February 2011

L. C. Kimerling,
J. L. Benton,
K. M. Lee and
M. Stavola
L. C. Kimerling
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07094
J. L. Benton
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07094
K. M. Lee
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07094
M. Stavola
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07094
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Abstract

The application of transient junction current and capacitance techniques to the study of imperfection in semiconductor materials is reviewed. An array of perturbation techniques are described which allow direct determination of electronic and atomic structure, as well as electrical and physical properties. The methods are illustrated with silicon materials studies of the divacancy using Polarized Excitation Photocapacitance, the oxygen donor using Stress and Electric Field Modulated DLTS, dislocations using spatially resolved DLTS, and iron impurities employing Charge State Control of Structure.

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References

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