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Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

Published online by Cambridge University Press:  26 February 2011

G. Kissinger,
T. Morgenstern,
G. Morgenstern,
H. B. Erzgräber and
H. Richter
G. Kissinger
Affiliation:
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH, Walter-Korsing-Str.2, D-15230 Frankfurt (Oder), Germany
T. Morgenstern
Affiliation:
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH, Walter-Korsing-Str.2, D-15230 Frankfurt (Oder), Germany
G. Morgenstern
Affiliation:
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH, Walter-Korsing-Str.2, D-15230 Frankfurt (Oder), Germany
H. B. Erzgräber
Affiliation:
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH, Walter-Korsing-Str.2, D-15230 Frankfurt (Oder), Germany
H. Richter
Affiliation:
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH, Walter-Korsing-Str.2, D-15230 Frankfurt (Oder), Germany
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Abstract

Stepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

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